Techniniai dokumentai
Specifikacijos
Markė
InfineonTvirtinimo tipas
Through Hole
Pakuotės tipas
TO-220
Maximum Continuous Forward Current
5A
Peak Reverse Repetitive Voltage
650V
Diode Configuration
Single
Diode Type
SiC Schottky
Kaiščių skaičius
2+Tab
Maximum Forward Voltage Drop
2.1V
Number of Elements per Chip
1
Diode Technology
SiC Schottky
Peak Non-Repetitive Forward Surge Current
46A
Kilmės šalis
Malaysia
Produkto aprašymas
thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon
The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Diodes and Rectifiers, Infineon
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 4,252
Each (In a Pack of 2) (be PVM)
€ 5,145
Each (In a Pack of 2) (su PVM)
2
€ 4,252
Each (In a Pack of 2) (be PVM)
€ 5,145
Each (In a Pack of 2) (su PVM)
2
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Pakuotė |
---|---|---|
2 - 8 | € 4,252 | € 8,50 |
10 - 98 | € 3,518 | € 7,04 |
100 - 498 | € 2,835 | € 5,67 |
500+ | € 1,995 | € 3,99 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonTvirtinimo tipas
Through Hole
Pakuotės tipas
TO-220
Maximum Continuous Forward Current
5A
Peak Reverse Repetitive Voltage
650V
Diode Configuration
Single
Diode Type
SiC Schottky
Kaiščių skaičius
2+Tab
Maximum Forward Voltage Drop
2.1V
Number of Elements per Chip
1
Diode Technology
SiC Schottky
Peak Non-Repetitive Forward Surge Current
46A
Kilmės šalis
Malaysia
Produkto aprašymas
thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon
The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.