Infineon 4Mbit SPI FRAM Memory 8-Pin SOIC, CY15B104Q-SXI
Techniniai dokumentai
Specifikacijos
Markė
InfineonMemory Size
4Mbit
Organisation
512K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
16ns
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
SOIC
Kaiščių skaičius
8
Matmenys
5.33 x 5.33 x 1.78mm
Ilgis
5.33mm
Maximum Operating Supply Voltage
3.6 V
Plotis
5.33mm
Aukštis
1.78mm
Maksimali darbinė temperatūra
+85 °C
Number of Bits per Word
8bit
Number of Words
512K
Minimali darbinė temperatūra
-40 °C
Minimum Operating Supply Voltage
2 V
Produkto aprašymas
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 19,66
už 1 vnt. (be PVM)
€ 23,79
už 1 vnt. (su PVM)
Standartas
1
€ 19,66
už 1 vnt. (be PVM)
€ 23,79
už 1 vnt. (su PVM)
Standartas
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonMemory Size
4Mbit
Organisation
512K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
16ns
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
SOIC
Kaiščių skaičius
8
Matmenys
5.33 x 5.33 x 1.78mm
Ilgis
5.33mm
Maximum Operating Supply Voltage
3.6 V
Plotis
5.33mm
Aukštis
1.78mm
Maksimali darbinė temperatūra
+85 °C
Number of Bits per Word
8bit
Number of Words
512K
Minimali darbinė temperatūra
-40 °C
Minimum Operating Supply Voltage
2 V
Produkto aprašymas
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products