Infineon N-Channel MOSFET, 223 A, 25 V, 8-Pin SuperSO8 5 x 6 BSC009NE2LS5ATMA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
223 A
Maximum Drain Source Voltage
25 V
Serija
OptiMOS™ 5
Pakuotės tipas
SuperSO8 5 x 6
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
1.25 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+16 V
Plotis
6.35mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
5.49mm
Typical Gate Charge @ Vgs
43 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
1.1mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1V
Kilmės šalis
China
Produkto aprašymas
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 3,22
€ 0,644 Each (In a Pack of 5) (be PVM)
€ 3,90
€ 0,779 Each (In a Pack of 5) (su PVM)
5
€ 3,22
€ 0,644 Each (In a Pack of 5) (be PVM)
€ 3,90
€ 0,779 Each (In a Pack of 5) (su PVM)
5
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
223 A
Maximum Drain Source Voltage
25 V
Serija
OptiMOS™ 5
Pakuotės tipas
SuperSO8 5 x 6
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
1.25 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+16 V
Plotis
6.35mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
5.49mm
Typical Gate Charge @ Vgs
43 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
1.1mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1V
Kilmės šalis
China
Produkto aprašymas
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products