N-Channel MOSFET, 8 A, 60 V, 3-Pin SOT-223 Diodes Inc DMN6069SE-13

RS kodas: 182-6900Gamintojas: DiodesZetexGamintojo kodas: DMN6069SE-13
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-223

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

11 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.55mm

Typical Gate Charge @ Vgs

16 nC @ 10V

Plotis

3.55mm

Number of Elements per Chip

1

Forward Diode Voltage

1.1V

Automotive Standard

AEC-Q101

Aukštis

1.65mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

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€ 0,215

Each (On a Reel of 2500) (be PVM)

€ 0,26

Each (On a Reel of 2500) (su PVM)

N-Channel MOSFET, 8 A, 60 V, 3-Pin SOT-223 Diodes Inc DMN6069SE-13
sticker-462

€ 0,215

Each (On a Reel of 2500) (be PVM)

€ 0,26

Each (On a Reel of 2500) (su PVM)

N-Channel MOSFET, 8 A, 60 V, 3-Pin SOT-223 Diodes Inc DMN6069SE-13
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-223

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

11 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.55mm

Typical Gate Charge @ Vgs

16 nC @ 10V

Plotis

3.55mm

Number of Elements per Chip

1

Forward Diode Voltage

1.1V

Automotive Standard

AEC-Q101

Aukštis

1.65mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more