N-Channel MOSFET, 120 A, 100 V, 3-Pin TO-220AB Vishay SUP70040E-GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
100 V
Pakuotės tipas
TO-220AB
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4.65mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Transistor Material
Si
Ilgis
10.51mm
Typical Gate Charge @ Vgs
76 nC @ 10 V
Aukštis
15.49mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.5V
Kilmės šalis
Taiwan, Province Of China
Produkto aprašymas
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 3,465
Each (In a Pack of 5) (be PVM)
€ 4,193
Each (In a Pack of 5) (su PVM)
5
€ 3,465
Each (In a Pack of 5) (be PVM)
€ 4,193
Each (In a Pack of 5) (su PVM)
5
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 45 | € 3,465 | € 17,32 |
| 50 - 120 | € 2,572 | € 12,86 |
| 125 - 245 | € 2,31 | € 11,55 |
| 250 - 495 | € 2,10 | € 10,50 |
| 500+ | € 1,89 | € 9,45 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
100 V
Pakuotės tipas
TO-220AB
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4.65mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Transistor Material
Si
Ilgis
10.51mm
Typical Gate Charge @ Vgs
76 nC @ 10 V
Aukštis
15.49mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.5V
Kilmės šalis
Taiwan, Province Of China
Produkto aprašymas
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products