N-Channel MOSFET, 25 A, 600 V, 4-Pin PowerPAK 8 x 8 Vishay SIHH26N60E-T1-GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
600 V
Pakuotės tipas
PowerPAK 8 x 8
Serija
E Series
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
4
Maximum Drain Source Resistance
135 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
202 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Ilgis
8.1mm
Typical Gate Charge @ Vgs
77 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Number of Elements per Chip
1
Plotis
8.1mm
Forward Diode Voltage
1.2V
Minimali darbinė temperatūra
-55 °C
Aukštis
1mm
Kilmės šalis
Taiwan, Province Of China
Produkto aprašymas
N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor
The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 5,98
už 1 vnt. (be PVM)
€ 7,24
už 1 vnt. (su PVM)
1
€ 5,98
už 1 vnt. (be PVM)
€ 7,24
už 1 vnt. (su PVM)
1
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina |
|---|---|
| 1 - 9 | € 5,98 |
| 10 - 49 | € 4,41 |
| 50 - 99 | € 3,73 |
| 100 - 249 | € 3,26 |
| 250+ | € 3,10 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
600 V
Pakuotės tipas
PowerPAK 8 x 8
Serija
E Series
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
4
Maximum Drain Source Resistance
135 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
202 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Ilgis
8.1mm
Typical Gate Charge @ Vgs
77 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Number of Elements per Chip
1
Plotis
8.1mm
Forward Diode Voltage
1.2V
Minimali darbinė temperatūra
-55 °C
Aukštis
1mm
Kilmės šalis
Taiwan, Province Of China
Produkto aprašymas
N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor
The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products