N-Channel MOSFET, 53 A, 100 V, 8-Pin VSON-CLIP Texas Instruments CSD19537Q3T
Techniniai dokumentai
Specifikacijos
Markė
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
53 A
Maximum Drain Source Voltage
100 V
Pakuotės tipas
VSON-CLIP
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
16.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.6V
Minimum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
3.4mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
3.4mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Aukštis
1.1mm
Serija
NexFET
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1V
Produkto aprašymas
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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€ 1,575
Each (In a Pack of 5) (be PVM)
€ 1,906
Each (In a Pack of 5) (su PVM)
5
€ 1,575
Each (In a Pack of 5) (be PVM)
€ 1,906
Each (In a Pack of 5) (su PVM)
5
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 10 | € 1,575 | € 7,88 |
| 15 - 45 | € 1,365 | € 6,82 |
| 50 - 245 | € 1,155 | € 5,78 |
| 250 - 495 | € 0,932 | € 4,66 |
| 500+ | € 0,825 | € 4,13 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
53 A
Maximum Drain Source Voltage
100 V
Pakuotės tipas
VSON-CLIP
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
16.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.6V
Minimum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
3.4mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
3.4mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Aukštis
1.1mm
Serija
NexFET
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1V
Produkto aprašymas
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products