N-Channel MOSFET, 279 A, 60 V, 3-Pin D2PAK Texas Instruments CSD18535KTTT
Techniniai dokumentai
Specifikacijos
Markė
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
279 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
2.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
11.33mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Ilgis
10.67mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Aukštis
4.83mm
Serija
NexFET
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1V
Produkto aprašymas
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 3,99
Each (In a Pack of 2) (be PVM)
€ 4,828
Each (In a Pack of 2) (su PVM)
2
€ 3,99
Each (In a Pack of 2) (be PVM)
€ 4,828
Each (In a Pack of 2) (su PVM)
2
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Pakuotė |
---|---|---|
2 - 8 | € 3,99 | € 7,98 |
10+ | € 2,152 | € 4,30 |
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Techniniai dokumentai
Specifikacijos
Markė
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
279 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
2.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
11.33mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Ilgis
10.67mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Aukštis
4.83mm
Serija
NexFET
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1V
Produkto aprašymas