N-Channel MOSFET, 17 A, 60 V, 3-Pin DPAK onsemi NVD5C688NL

RS kodas: 141-2081Gamintojas: onsemiGamintojo kodas: NVD5C688NLT4G
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

18 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±16 V

Plotis

6.22mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

6.73mm

Typical Gate Charge @ Vgs

7 nC @ 10 V

Aukštis

2.38mm

Serija

NVD5C688NL-D

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Produkto aprašymas

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

€ 0,797

Each (On a Reel of 2500) (be PVM)

€ 0,964

Each (On a Reel of 2500) (su PVM)

N-Channel MOSFET, 17 A, 60 V, 3-Pin DPAK onsemi NVD5C688NL
sticker-462

€ 0,797

Each (On a Reel of 2500) (be PVM)

€ 0,964

Each (On a Reel of 2500) (su PVM)

N-Channel MOSFET, 17 A, 60 V, 3-Pin DPAK onsemi NVD5C688NL
Sandėlio informacija laikinai nepasiekiama.
sticker-462

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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

18 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±16 V

Plotis

6.22mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

6.73mm

Typical Gate Charge @ Vgs

7 nC @ 10 V

Aukštis

2.38mm

Serija

NVD5C688NL-D

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Produkto aprašymas

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor