Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
18 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±16 V
Plotis
6.22mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Ilgis
6.73mm
Typical Gate Charge @ Vgs
7 nC @ 10 V
Aukštis
2.38mm
Serija
NVD5C688NL-D
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Produkto aprašymas
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,797
Each (On a Reel of 2500) (be PVM)
€ 0,964
Each (On a Reel of 2500) (su PVM)
2500
€ 0,797
Each (On a Reel of 2500) (be PVM)
€ 0,964
Each (On a Reel of 2500) (su PVM)
2500
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Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
18 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±16 V
Plotis
6.22mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Ilgis
6.73mm
Typical Gate Charge @ Vgs
7 nC @ 10 V
Aukštis
2.38mm
Serija
NVD5C688NL-D
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Produkto aprašymas