N-Channel MOSFET, 300 A, 40 V, 4 + Tab-Pin DFN onsemi NTMFS5C410NT1G

RS kodas: 126-3472Gamintojas: onsemiGamintojo kodas: NTMFS5C410NT1G
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

300 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

DFN

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

4 + Tab

Maximum Drain Source Resistance

920 μΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

166 W

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

5.1mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

6.1mm

Typical Gate Charge @ Vgs

86 nC @ 10 V

Aukštis

1.05mm

Serija

NTMFS5C410N

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Produkto aprašymas

N-Channel Power MOSFET, 40V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Patikrinkite dar kartą.

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€ 0,582

Each (In a Pack of 5) (be PVM)

€ 0,704

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 300 A, 40 V, 4 + Tab-Pin DFN onsemi NTMFS5C410NT1G
Pasirinkite pakuotės tipą
sticker-462

€ 0,582

Each (In a Pack of 5) (be PVM)

€ 0,704

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 300 A, 40 V, 4 + Tab-Pin DFN onsemi NTMFS5C410NT1G
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

300 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

DFN

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

4 + Tab

Maximum Drain Source Resistance

920 μΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

166 W

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

5.1mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

6.1mm

Typical Gate Charge @ Vgs

86 nC @ 10 V

Aukštis

1.05mm

Serija

NTMFS5C410N

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Produkto aprašymas

N-Channel Power MOSFET, 40V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more