P-Channel MOSFET, 12 A, 60 V, 3-Pin IPAK onsemi NTD2955-1G

RS kodas: 124-5399Gamintojas: onsemiGamintojo kodas: NTD2955-1G
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

P

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

IPAK (TO-251)

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

55 W

Maximum Gate Source Voltage

-25 V, +25 V

Transistor Material

Si

Ilgis

6.73mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Plotis

2.38mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Aukštis

6.35mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Malaysia

Produkto aprašymas

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 0,958

Each (In a Tube of 75) (be PVM)

€ 1,159

Each (In a Tube of 75) (su PVM)

P-Channel MOSFET, 12 A, 60 V, 3-Pin IPAK onsemi NTD2955-1G
sticker-462

€ 0,958

Each (In a Tube of 75) (be PVM)

€ 1,159

Each (In a Tube of 75) (su PVM)

P-Channel MOSFET, 12 A, 60 V, 3-Pin IPAK onsemi NTD2955-1G
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Vamzdelis
75 - 300€ 0,958€ 71,82
375 - 1425€ 0,932€ 69,93
1500 - 3675€ 0,908€ 68,12
3750+€ 0,887€ 66,54

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

P

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

IPAK (TO-251)

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

55 W

Maximum Gate Source Voltage

-25 V, +25 V

Transistor Material

Si

Ilgis

6.73mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Plotis

2.38mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Aukštis

6.35mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Malaysia

Produkto aprašymas

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more