onsemi NGTB40N120S3W IGBT, 160 A 1200 V, 3-Pin TO-247, Through Hole
Techniniai dokumentai
Specifikacijos
Markė
onsemiMaximum Continuous Collector Current
160 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
454 W
Number of Transistors
1
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Common Emitter
Matmenys
16.25 x 5.3 x 21.34mm
Minimali darbinė temperatūra
-55 °C
Gate Capacitance
4912pF
Maksimali darbinė temperatūra
+175 °C
Produkto aprašymas
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Patikrinkite dar kartą.
€ 5,355
Each (In a Tube of 30) (be PVM)
€ 6,48
Each (In a Tube of 30) (su PVM)
30
€ 5,355
Each (In a Tube of 30) (be PVM)
€ 6,48
Each (In a Tube of 30) (su PVM)
30
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 30 - 120 | € 5,355 | € 160,65 |
| 150 - 270 | € 4,62 | € 138,60 |
| 300+ | € 4,358 | € 130,72 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
onsemiMaximum Continuous Collector Current
160 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
454 W
Number of Transistors
1
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Common Emitter
Matmenys
16.25 x 5.3 x 21.34mm
Minimali darbinė temperatūra
-55 °C
Gate Capacitance
4912pF
Maksimali darbinė temperatūra
+175 °C
Produkto aprašymas
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products