Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
51 A
Maximum Drain Source Voltage
100 V
Pakuotės tipas
PQFN8
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
12.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
63 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Plotis
5.85mm
Ilgis
5mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Serija
PowerTrench
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.3V
Aukštis
1.05mm
Produkto aprašymas
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 1,365
Each (In a Pack of 25) (be PVM)
€ 1,652
Each (In a Pack of 25) (su PVM)
25
€ 1,365
Each (In a Pack of 25) (be PVM)
€ 1,652
Each (In a Pack of 25) (su PVM)
25
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Pakuotė |
---|---|---|
25 - 75 | € 1,365 | € 34,12 |
100 - 475 | € 1,102 | € 27,56 |
500 - 975 | € 0,914 | € 22,84 |
1000 - 2975 | € 0,744 | € 18,61 |
3000+ | € 0,721 | € 18,03 |
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Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
51 A
Maximum Drain Source Voltage
100 V
Pakuotės tipas
PQFN8
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
12.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
63 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Plotis
5.85mm
Ilgis
5mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Serija
PowerTrench
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.3V
Aukštis
1.05mm
Produkto aprašymas