Dual N-Channel MOSFET, 211 A, 30 V, 8-Pin PQFN onsemi FDMS1D4N03

RS kodas: 146-3376Gamintojas: ON SemiconductorGamintojo kodas: FDMS1D4N03S
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

211 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

PQFN

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

1.09 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

74 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±16 V

Plotis

5.85mm

Number of Elements per Chip

2

Ilgis

5mm

Typical Gate Charge @ Vgs

102 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.05mm

Serija

PowerTrench

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.3V

Produkto aprašymas

N-Channel Power MOSFET, 30V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

€ 0,307

Each (On a Reel of 3000) (be PVM)

€ 0,371

Each (On a Reel of 3000) (su PVM)

Dual N-Channel MOSFET, 211 A, 30 V, 8-Pin PQFN onsemi FDMS1D4N03
sticker-462

€ 0,307

Each (On a Reel of 3000) (be PVM)

€ 0,371

Each (On a Reel of 3000) (su PVM)

Dual N-Channel MOSFET, 211 A, 30 V, 8-Pin PQFN onsemi FDMS1D4N03
Sandėlio informacija laikinai nepasiekiama.
sticker-462

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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

211 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

PQFN

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

1.09 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

74 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±16 V

Plotis

5.85mm

Number of Elements per Chip

2

Ilgis

5mm

Typical Gate Charge @ Vgs

102 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.05mm

Serija

PowerTrench

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.3V

Produkto aprašymas

N-Channel Power MOSFET, 30V, ON Semiconductor

MOSFET Transistors, ON Semiconductor