onsemi 2SC5551AF-TD-E NPN Transistor, 300 mA, 30 V, 3-Pin PCP
Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorTransistor Type
NPN
Maximum DC Collector Current
300 mA
Maximum Collector Emitter Voltage
30 V
Pakuotės tipas
PCP
Tvirtinimo tipas
Surface Mount
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Collector Base Voltage
40 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
3.5 GHz
Kaiščių skaičius
3
Number of Elements per Chip
1
Matmenys
4.5 x 2.5 x 1.5mm
Maksimali darbinė temperatūra
+150 °C
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P.O.A.
10
P.O.A.
10
Ideate. Create. Collaborate
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Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorTransistor Type
NPN
Maximum DC Collector Current
300 mA
Maximum Collector Emitter Voltage
30 V
Pakuotės tipas
PCP
Tvirtinimo tipas
Surface Mount
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Collector Base Voltage
40 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
3.5 GHz
Kaiščių skaičius
3
Number of Elements per Chip
1
Matmenys
4.5 x 2.5 x 1.5mm
Maksimali darbinė temperatūra
+150 °C
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products