N-Channel MOSFET, 20 A, 60 V, 3-Pin DPAK onsemi HUFA76429D3ST_F085

RS kodas: 124-1427Gamintojas: onsemiGamintojo kodas: HUFA76429D3ST-F085
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Maksimali darbinė temperatūra

+175 °C

Transistor Material

Si

Ilgis

6.73mm

Plotis

6.22mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

38 nC @ 10 V

Aukštis

2.39mm

Serija

UltraFET

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

United States

Produkto aprašymas

UltraFET® MOSFET, Fairchild Semiconductor

UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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Patikrinkite dar kartą.

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€ 0,594

Each (On a Reel of 2500) (be PVM)

€ 0,719

Each (On a Reel of 2500) (su PVM)

N-Channel MOSFET, 20 A, 60 V, 3-Pin DPAK onsemi HUFA76429D3ST_F085
sticker-462

€ 0,594

Each (On a Reel of 2500) (be PVM)

€ 0,719

Each (On a Reel of 2500) (su PVM)

N-Channel MOSFET, 20 A, 60 V, 3-Pin DPAK onsemi HUFA76429D3ST_F085
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Ritė
2500 - 5000€ 0,594€ 1 485,75
7500+€ 0,58€ 1 449,00

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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Maksimali darbinė temperatūra

+175 °C

Transistor Material

Si

Ilgis

6.73mm

Plotis

6.22mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

38 nC @ 10 V

Aukštis

2.39mm

Serija

UltraFET

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

United States

Produkto aprašymas

UltraFET® MOSFET, Fairchild Semiconductor

UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.